题目：Manganese Doped Tin Oxide for Stable and Efficient Quantum Dot Light–Emitting Diodes

作者：Wenchen Ma, ^a Zhenwei Ren, ^a,* Hengfei Shi,^a Xueqing Xia,^b Xinwen Wang,^a Huifei Ji,^a Hua Chen,^a Chengzhao Luo,^a Chinhua Wang,^a Song Chen,^b,* Yu Chen ^a,c,*

单位：

^a School of Optoelectronic Science and Engineering & Collaborative Innovation Center of  Suzhou Nano Science and Technology,Soochow University,Suzhou 215006, China

^b College of Chemistry, Chemical Engineering and Materials Science, Soochow University,Suzhou 215123,China

^c National University of Singapore Suzhou Research Institute,Dushu Lake Science and Education Innovation District,Suzhou 215123,China

摘要：As an alternative electron transport material to the chemically unstable ZnO nanoparticles (NPs), SnO₂ NPs exhibit a great potential to construct high-performance quantum dot light-emitting diodes (QLEDs). However, only moderate device performance has been obtained for SnO₂-based QLEDs due to the low electron mobility, unfavorable energy band, and massive defects of SnO₂ NPs. Herein, a strategy of transition metal doping is reported to achieve high-quality manganese-doped SnO₂ (Mn-SnO₂) NPs to address the above problems. Specifically, the large bond energy of Mn─O bonds reduces the oxygen vacancy defects, prompting an effective suppression of the interfacial exciton quenching for massive radiative recombination. Moreover, the favorable energy band and high electron mobility for Mn-SnO₂ promote efficient electron injection and transportation. The good optoelectronic properties for Mn-SnO₂ NPs contribute to a great enhancement in device efficiency from 8.2 to 11.4% and a remarkable improvement in lifetime (T₉₅) from 565.3 to 1009.2h at 1000 cd⁻², among the best performing ZnO-free QLEDs. Notably, the Mn-SnO₂ based QLEDs show a very superior shelf stability to the QLEDs based on SnO₂ and ZnO analogs. Consequently, this work reports an effective approach to achieve high-quality SnO₂ NPs for efficient and stable QLEDs.

影响因子：11

链接：https://onlinelibrary.wiley.com/doi/epdf/10.1002/lpor.202400005